5% OFF for all first time buyers Shop Now
£

NTJD5121NT1G Dual N-channel MOSFET Transistor, 0.3 A, 60 V, 6-Pin SC-88

Onsemi NTJD5121NT1G Dual N-channel MOSFET Transistor, 0.3 A, 60 V, 6-Pin SC-88

Manufacturer Code: NTJD5121NT1G
MCIN: 34779
Item Specifications Datasheets Product Questions
Item Specifications

Item Specifications

Our Lead Time: In stock and available to ship immediately
Country: United States
Depth: 1.2mm
Height: 2mm
Width: 0.9mm
Weight: 1gm
Case/Package: SC
Length: 2.2mm
Max Operating Temperature: 150 °C
Min Operating Temperature: -55 °C
RoHS: Compliant
Packaging: Digi-Reel®
Radiation Hardening: No
Voltage: 600
Lead Free: Lead Free
Number of Pins: 6
REACH SVHC: No SVHC
Contact Plating: Tin
Height: 1mm
Width: 1.35mm
Schedule B: 8541210040
Rise Time: 34 ns
Lifecycle Status: Production (Last Updated: 2 years ago)
Manufacturer Lifecycle Status: ACTIVE (Last Updated: 2 years ago)
Country of Origin: China
Weight (kg): .000454
Operating Temperature: -55 to 150 �C
ECCN: EAR99
Minimum Operating Temperature: -55 °C
Maximum Operating Temperature: +150 °C
Mounting Type: Surface Mount
Resistance: 1.6 Ω
Product Range: -
Mounting: Surface Mount
Package Type: SOT-363 (SC-88)
Number of Channels: 2
Turn-On Delay Time: 22 ns
Element Configuration: Dual
Max Power Dissipation: 266 mW
Power Dissipation: 250 mW
Max Junction Temperature (Tj): 150 °C
Number of Elements: 2
Fall Time: 32 ns
Input Capacitance: 26 pF
Turn-Off Delay Time: 34 ns
Drain to Source Resistance: 1.2 Ω
Continuous Drain Current (ID): 295 mA
Drain to Source Voltage (Vdss): 60 V
Gate to Source Voltage (Vgs): 20 V
Nominal Vgs: 1.7 V
Rds On Max: 1.6 Ω
Threshold Voltage: 1.7 V
Drain to Source Breakdown Voltage: 60 V
Channel Type: N
Tariff No: 85412900
US ECCN: EAR99
EU ECCN: NLR
RoHS Compliant: Yes
RoHS Phthalates Compliant: Yes
SVHC: No SVHC (08-Jul-2021)
HTSN: 8541290095
No. of Pins: 6Pins
MSL Level: MSL 1 - Unlimited
Max Processing Temp: 260 �C
Product Dimensions: 2 x 1.25 x 0.9 mm
Pin Count: 6
Supplier Package: SC-88
Automotive Qualification Standard: -
Power Dissipation Pd: 266mW
Number of Elements per Chip: 2
Maximum Power Dissipation: 266 mW
MSL: MSL 1 - Unlimited
Moisture Sensitivity Level: MSL 1 - Unlimited
Transistor Configuration: Isolated
Transistor Case Style: SOT-363
Continuous Drain Current Id: 304mA
Drain Source Voltage Vds: 60V
Transistor Mounting: Surface Mount
On Resistance Rds(on): 1ohm
Rds(on) Test Voltage Vgs: 10V
Transistor Polarity: N Channel
Maximum Gate Source Voltage: -20 V, +20 V
Maximum Drain Source Voltage: 60 V
Typical Fall Time: 32 ns
Channel Mode: Enhancement
Typical Rise Time: 34 ns
RDS-on: [email protected] 10V Ohm
Maximum Continuous Drain Current: 300 mA
Typical Gate Charge @ Vgs: 0.9 nC @ 4.5 V
Transistor Material: Si
Maximum Drain Source Resistance: 2.5 ?
Maximum Gate Threshold Voltage: 2.5V
Maximum Gate Source Voltage (conflicted): �20 V
Typical Turn-Off Delay Time N Channel: 34 ns
Maximum Continuous Drain Current N Channel: 295 mA
Typical Turn-On Delay Time N Channel: undefined
Channel Type (conflicted): Dual N

Datasheets
Product Questions

Product Questions

from US$0.40

from US$0.40

inc. VAT